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6116LA35TDB

6116LA35TDB

6116LA35TDB

Renesas Electronics America Inc.

Memory IC IDT6116

SOT-23

6116LA35TDB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case 24-CDIP (0.300, 7.62mm)
Operating Temperature-55°C~125°C TA
PackagingTray
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SRAM - Asynchronous
Voltage - Supply 4.5V~5.5V
Base Part Number IDT6116
Memory Size16Kb 2K x 8
Memory TypeVolatile
Memory Format SRAM
Memory InterfaceParallel
Write Cycle Time - Word, Page 35ns
RoHS StatusNon-RoHS Compliant
In-Stock:485 items

Pricing & Ordering

QuantityUnit PriceExt. Price
300$12.75750$3827.25

6116LA35TDB Product Details

6116LA35TDB Overview


In terms of its memory type, it can be classified as Volatile. The case comes in the Tray style. The case is embedded in 24-CDIP (0.300, 7.62mm). There is 16Kb 2K x 8 of memory on the chip. The device uses a mainstream SRAM-format memory. -55°C~125°C TA is an extended operating temperature range, making this device ideal for demanding applications. It is supplied votage within 4.5V~5.5V. There is a recommended mounting type of Through Hole for it. A device's base part number, IDT6116, is often used in order to identify similar components.

6116LA35TDB Features


Package / Case: 24-CDIP (0.300, 7.62mm)

6116LA35TDB Applications


There are a lot of Renesas Electronics America Inc. 6116LA35TDB Memory applications.

  • supercomputers
  • nonvolatile BIOS memory
  • telecommunications
  • personal digital assistants
  • networks
  • hard disk drive (HDD)
  • DVD disk buffer
  • cell phones
  • graphics card
  • eSRAM

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