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RJK1002DPN-E0#T2

RJK1002DPN-E0#T2

RJK1002DPN-E0#T2

Renesas Electronics America

MOSFET N-CH 100V 70A TO220

SOT-23

RJK1002DPN-E0#T2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Published 2012
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.6m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 70A Ta
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
RoHS StatusROHS3 Compliant
In-Stock:3416 items

About RJK1002DPN-E0#T2

The RJK1002DPN-E0#T2 from Renesas Electronics America is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 70A TO220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RJK1002DPN-E0#T2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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