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RJK0703DPN-A0#T2

RJK0703DPN-A0#T2

RJK0703DPN-A0#T2

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel 6.7m Ω @ 35A, 10V ±20V 4150pF @ 10V 56nC @ 10V 75V TO-220-3

SOT-23

RJK0703DPN-A0#T2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 70A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:1669 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.91000$3.91
500$3.8709$1935.45
1000$3.8318$3831.8
1500$3.7927$5689.05
2000$3.7536$7507.2
2500$3.7145$9286.25

RJK0703DPN-A0#T2 Product Details

RJK0703DPN-A0#T2 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4150pF @ 10V.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

RJK0703DPN-A0#T2 Features


a 75V drain to source voltage (Vdss)


RJK0703DPN-A0#T2 Applications


There are a lot of Renesas Electronics America
RJK0703DPN-A0#T2 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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