Name: DMP3099L-7
Brand: Diodes Incorporated
SKU: DMP3099L-7
Price: 0.37000 USD
Availability: InStock

new-10%

DMP3099L-7

Manufacturer part number:DMP3099L-7

Manufacturer:Diodes Incorporated

Description:DMP3099L-7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:DMP3099L-7 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.08W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.08W
Turn On Delay Time	4.8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	563pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 4.5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	31 ns
Continuous Drain Current (ID)	-3.8A
Threshold Voltage	-2.1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

DMP3099L-7 Product Details

DMP3099L-7 Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.