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RJH60T04DPQ-A0#T0

RJH60T04DPQ-A0#T0

RJH60T04DPQ-A0#T0

Renesas Electronics America

IGBT TH

SOT-23

RJH60T04DPQ-A0#T0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Operating Temperature150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Subcategory Insulated Gate BIP Transistors
Reach Compliance Code compliant
Input Type Standard
Power - Max 208.3W
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 100ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 60A
Power Dissipation-Max (Abs) 208.3W
Test Condition 300V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 30A
IGBT Type Trench
Gate Charge87nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 54ns/136ns
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 8V
RoHS StatusRoHS Compliant
In-Stock:3163 items

About RJH60T04DPQ-A0#T0

The RJH60T04DPQ-A0#T0 from Renesas Electronics America is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT TH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RJH60T04DPQ-A0#T0, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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