VN0300L Description
VN0300L enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN0300L Features
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
Low power drive requirement
Free from the secondary breakdown
Low CISS and fast switching speeds
High input impedance and high gain
VN0300L Applications
Automotive
Personal electronics
Communications equipment
