Name: FQD2N60CTM
Brand: ON Semiconductor
SKU: FQD2N60CTM
Availability: InStock

new-10%

FQD2N60CTM

Manufacturer part number:FQD2N60CTM

Manufacturer:ON Semiconductor

Description:FQD2N60CTM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQD2N60CTM Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	1.9A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Voltage	650V
Power Dissipation-Max	2.5W Ta 44W Tc
Element Configuration	Single
Current	18A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7 Ω @ 950mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	235pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.9A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	1.9A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FQD2N60CTM Product Details

FQD2N60CTM Description

FQD2N60CTM belongs to the family of N-channel enhancement mode QFET? MOSFETs that are designed to minimize on-state resistance, offer advanced switching performance, and high avalanche energy strength based on planar stripe and DMOS technology. Due to its high quality and reliable performance, FQD2N60CTM is well suited for switching mode power supplies, active power factor correction, and electronic lamp ballasts.