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MMSTA14-7-F

MMSTA14-7-F

MMSTA14-7-F

Diodes Incorporated

MMSTA14-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMSTA14-7-F Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating300mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMSTA14
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14798 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.808907$0.808907
10$0.763120$7.6312
100$0.719925$71.9925
500$0.679174$339.587
1000$0.640730$640.73

MMSTA14-7-F Product Details

MMSTA14-7-F Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (300mA).As you can see, the part has a transition frequency of 125MHz.There is a breakdown input voltage of 30V volts that it can take.Maximum collector currents can be below 300mA volts.

MMSTA14-7-F Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz

MMSTA14-7-F Applications


There are a lot of Diodes Incorporated MMSTA14-7-F applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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