TIG058E8-TL-H Description
TIG058E8-TL-H is a 400v N-channel IGBT. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor TIG058E8-TL-H is in the ECH8 package.
TIG058E8-TL-H Features
Low-saturation voltage
Low voltage drive (4V)
Enhancement type
Built-in Gate-to-Emitter protection diode
Mounting Height 0. 9mm, Mounting Area 8.12mm2
dv / dt guarantee
Halogen-free compliance
TIG058E8-TL-H Applications
Automotive
Infotainment & cluster
Communications equipment
Broadband fixed line access
Personal electronics
Connected peripherals & printers
