FGH75T65SQDNL4 Features
? Extremely Efficient Trench with Field Stop Technology
? TJmax = 175°C
? Improved Gate Control Lowers Switching Losses
? Separate Emitter Drive Pin? TO?247?4L for Minimal Eon Losses
? Optimized for High Speed Switching
? These are Pb?Free Device
FGH75T65SQDNL4 Applications
? Solar Inverter
? Uninterruptible Power Inverter Supplies (UPS)
? Neutral Point Clamp Topology
FGH75T65SQDNL4 Description
This insulated gate bipolar transistor (IGBT) FGH75T65SQDNL4 features a rugged and cost-effective field-stop IV trench structure that provides excellent performance in demanding switching applications while providing low on voltage and minimum switching loss. In addition, the new equipment uses TO-247-4L package, which significantly reduces the EON loss compared with the standard-247-3L package. IGBT is ideal for uninterruptible power supplies and solar applications. The device integrates a soft, fast co-packaged low forward voltage continuous flow diode.
