SS8550DBU Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -280mV.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -6V to gain high efficiency.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.When collector current reaches its maximum, it can reach 1.5A volts.
SS8550DBU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550DBU Applications
There are a lot of ON Semiconductor SS8550DBU applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
