MJD117T4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 2A 3V.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.An input voltage of 100V volts is the breakdown voltage.During maximum operation, collector current can be as low as 4A volts.
MJD117T4 Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
MJD117T4 Applications
There are a lot of STMicroelectronics MJD117T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
