The ON Semiconductor SMMUN2211LT3G is a single, pre-biased bipolar junction transistor (BJT) in a SOT-23 package. It has a maximum collector current of 246 mW and a maximum collector-emitter voltage of 30 V. It is designed for use in low-power, low-voltage applications such as switching, amplifying, and signal processing.
Features of the SMMUN2211LT3G include: • Low collector-emitter saturation voltage • Low collector-emitter leakage current • High gain • Low noise • High frequency operation • High temperature operation
Applications of the SMMUN2211LT3G include: • Automotive • Industrial • Consumer electronics • Telecommunications • Medical • Power management • Lighting • Audio/video
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