SDTC114EET1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
SDTC114EET1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
DTC114
Pin Count
3
Reference Standard
AEC-Q101
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage
50V
hFE Min
35
Resistor - Base (R1)
10 k Ω
Resistor - Emitter Base (R2)
10 k Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:20513 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SDTC114EET1G Product Details
SDTC114EET1G Description
The ON Semiconductor SMUN2211T1G is an NPN Bipolar Digital Transistor (BRT) designed to replace a single device and its external resistor bias network.
SDTC114EET1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
SDTC114EET1G Applications
Industrial
Automotive
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