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SMMBTA92LT3G

SMMBTA92LT3G

SMMBTA92LT3G

ON Semiconductor

SMMBTA92LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBTA92LT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Base Part Number MMBTA92
Pin Count3
Reference Standard AEC-Q101
Number of Elements 1
Element ConfigurationSingle
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Max Frequency 100MHz
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-500mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) -5V
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16583 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.381000$0.381
10$0.359434$3.59434
100$0.339089$33.9089
500$0.319895$159.9475
1000$0.301788$301.788

SMMBTA92LT3G Product Details

SMMBTA92LT3G Overview


This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 50MHz in the part.A maximum collector current of 500mA volts is possible.

SMMBTA92LT3G Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
a transition frequency of 50MHz

SMMBTA92LT3G Applications


There are a lot of ON Semiconductor SMMBTA92LT3G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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