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SI4435DY

SI4435DY

SI4435DY

ON Semiconductor

Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R

SOT-23

SI4435DY Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 130mg
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2001
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 20MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating-8.8A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1604pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.8A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Rise Time13.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) -8.8A
Threshold Voltage -1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Nominal Vgs -1.7 V
Height 1.57mm
Length 4.9mm
Width 3.9mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6859 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.235282$1.235282
10$1.165360$11.6536
100$1.099396$109.9396
500$1.037166$518.583
1000$0.978459$978.459

About SI4435DY

The SI4435DY from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI4435DY, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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