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SGL50N60RUFDTU

SGL50N60RUFDTU

SGL50N60RUFDTU

ON Semiconductor

SGL50N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGL50N60RUFDTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 100V
Max Power Dissipation250W
Current Rating40A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250W
Input Type Standard
Turn On Delay Time26 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 66 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 100ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.2V
Turn On Time119 ns
Test Condition 300V, 50A, 5.9 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 50A
Continuous Collector Current 80A
Turn Off Time-Nom (toff) 329 ns
Gate Charge145nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 26ns/66ns
Switching Energy 1.68mJ (on), 1.03mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
Fall Time-Max (tf) 160ns
Height 26mm
Length 20mm
Width 5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2011 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.18000$8.18
10$7.42400$74.24
375$5.92968$2223.63
750$5.43160$4073.7

SGL50N60RUFDTU Product Details

Description


The SGL50N60RUFDTU is an IGBT with a 600 V and 50 A short circuit rating. Insulated Gate Bipolar Transistors (IGBTs) from Fairchild? provide low conduction and switching losses, as well as short circuit robustness. The RUFD series is intended for applications requiring short circuit robustness, such as motor control, UPS, and general inverters.



Features


? High Speed Switching

? High Input Impedance

? Short Circuit Rating

? 50 A, 600 V, TC = 100°C

? Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A

? Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C



Applications


? Motor Control

? UPS

? General Inverter

? As a Switch

? Industrial Motors


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