Name: SBSS84LT1G
Brand: ON Semiconductor
SKU: SBSS84LT1G
Price: 0.44000 USD
Availability: InStock

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SBSS84LT1G

Manufacturer part number:SBSS84LT1G

Manufacturer:ON Semiconductor

Description:SBSS84LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:SBSS84LT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	225mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225mW
Turn On Delay Time	3.6 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 5V
Current - Continuous Drain (Id) @ 25°C	130mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 10V
Rise Time	9.7ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	1.7 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	-130mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-50V
Max Junction Temperature (Tj)	150°C
Height	1.11mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SBSS84LT1G Product Details

SBSS84LT1G Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's planar stripe, DMOS technology. This cutting-edge technology has been specifically created to lower on-state resistance, give greater switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are perfect for low voltage applications including DC/DC converters, automotive, and high efficiency switching for power management in portable and battery-operated products.