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IPB120N06S402ATMA2

IPB120N06S402ATMA2

IPB120N06S402ATMA2

Infineon Technologies

Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R

SOT-23

IPB120N06S402ATMA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 188W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation188W
Case Connection DRAIN
Turn On Delay Time25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 15750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage60V
Drain-source On Resistance-Max 0.0024Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 560 mJ
Height 4.4mm
Length 10mm
Width 9.25mm
RoHS StatusROHS3 Compliant
In-Stock:2162 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.366171$1.366171
10$1.288840$12.8884
100$1.215887$121.5887
500$1.147064$573.532
1000$1.082135$1082.135

About IPB120N06S402ATMA2

The IPB120N06S402ATMA2 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB120N06S402ATMA2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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