RFP40N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP40N10 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
40A
Number of Elements
1
Voltage
100V
Power Dissipation-Max
160W Tc
Element Configuration
Single
Current
40A
Power Dissipation
160W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
300nC @ 20V
Rise Time
30ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
40A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
40mOhm
Rds On Max
40 mΩ
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:4228 items
RFP40N10 Product Details
RFP40N10 Description
The ON Semiconductor RFP40N10 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses the feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
RFP40N10 Features
rDS(ON) = 0.040?
UIS Rating Curve
SOA is Power Dissipation Limited
175℃ Operating Temperature
40A, 100V
RFP40N10 Application
Switching regulators
Switching converters
Motor drivers
Relay drivers
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