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PHD18NQ10T,118

PHD18NQ10T,118

PHD18NQ10T,118

NXP USA Inc.

MOSFET N-CH 100V 18A DPAK

SOT-23

PHD18NQ10T,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 1999
Series TrenchMOS™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Pin Count3
Power Dissipation-Max 79W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Source Url Status Check Date 2013-06-14 00:00:00
RoHS StatusNon-RoHS Compliant
In-Stock:4122 items

About PHD18NQ10T,118

The PHD18NQ10T,118 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 18A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the PHD18NQ10T,118, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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