RFP14N05 Description
These are N-channel power MOSFET manufactured by MegaFET process. The feature size used in this process is close to that of LSI integrated circuits, thus achieving the best use of silicon and resulting in excellent performance. They are designed for applications such as switching voltage regulators, switching converters, motor drivers and relay drivers. This performance is achieved through a special gate oxide design that provides full rated conductance at gate bias in the 3V-5V range, thus facilitating true switching power control directly from logic-level (5V) integrated circuits.
RFP14N05 Features
? 14A, 50V
? rDS(ON) = 0.100?
? Temperature Compensating PSPICE? Model
? Can be Driven Directly from CMOS, NMOS, and
TTL Circuits
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? 175oC Operating Temperature
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
RFP14N05 Applications
logic-level (5V) integrated circuits
