Name: SIR892DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR892DP-T1-GE3
Availability: InStock

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SIR892DP-T1-GE3

Manufacturer part number:SIR892DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 25V 50A PPAK SO-8

Case Package:SOT-23

Datasheet:SIR892DP-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	3.2mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5W Ta 50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2645pF @ 10V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	2.6V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	30A
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	70A
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SIR892DP-T1-GE3

The SIR892DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 50A PPAK SO-8.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIR892DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.