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RFG70N06

RFG70N06

RFG70N06

ON Semiconductor

RFG70N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFG70N06 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 150W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 156nC @ 20V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:4717 items

RFG70N06 Product Details

RFG70N06 Description


The RFG70N06 is an N-Channel power MOSFET made with MegaFET technology. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance. They were created for use in switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be directly controlled by integrated circuits.



RFG70N06 Features


  • 70A, 60V

  • rDS(ON)= 0.014Ω

  • Temperature Compensating PSPICE? Model

  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve (Single Pulse)

  • 175°C Operating Temperature

  • Related Literature



RFG70N06 Applications


  • Other Industrial


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