Name: IRF7210PBF
Brand: Infineon Technologies
SKU: IRF7210PBF
Availability: InStock

new-10%

IRF7210PBF

Manufacturer part number:IRF7210PBF

Manufacturer:Infineon Technologies

Description:IRF7210PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7210PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	7mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Power Dissipation	2.5W
Turn On Delay Time	50 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	17179pF @ 10V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	212nC @ 5V
Rise Time	3ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	6.5 ns
Continuous Drain Current (ID)	-16A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-12V
Dual Supply Voltage	12V
Input Capacitance	17.179nF
Recovery Time	247 ns
Drain to Source Resistance	7mOhm
Rds On Max	7 mΩ
Nominal Vgs	600 mV
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRF7210PBF Product Details

IRF7210PBF Description

IRF7210PBF is a -12v HEXFET? Power MOSFET. The P-Channel MOSFET IRF7210PBF from International Rectifier utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.