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RFG60P05E

RFG60P05E

RFG60P05E

ON Semiconductor

RFG60P05E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFG60P05E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature-55°C~175°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 215W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 450nC @ 20V
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:1502 items

RFG60P05E Product Details

RFG60P05E Description


The RFG60P05E is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.



RFG60P05E Features


  • 60A, 50V

  • rDS(ON) = 0.030?

  • Temperature Compensating PSPICE? Model

  • 2kV ESD Rated

  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

  • 175℃ Operating Temperature



RFG60P05E Applications


  • Switching regulators

  • Switching converters

  • Motor drivers

  • Relay drivers


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