Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SI7491DP-T1-GE3

SI7491DP-T1-GE3

SI7491DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 11A PPAK SO-8

SOT-23

SI7491DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 8.5mOhm
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-XDSO-C5
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation5W
Case Connection DRAIN
Turn On Delay Time150 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 85nC @ 5V
Rise Time190ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 18A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 50A
Nominal Vgs -3 V
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3757 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.409394$1.409394
10$1.329617$13.29617
100$1.254356$125.4356
500$1.183354$591.677
1000$1.116372$1116.372

About SI7491DP-T1-GE3

The SI7491DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 30V 11A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7491DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News