Name: RFD3055LESM
Brand: ON Semiconductor
SKU: RFD3055LESM
Availability: InStock

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RFD3055LESM

Manufacturer part number:RFD3055LESM

Manufacturer:ON Semiconductor

Description:RFD3055LESM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:RFD3055LESM Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	11A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	38W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	107m Ω @ 8A, 5V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	11.3nC @ 10V
Rise Time	105ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±16V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	22 ns
Continuous Drain Current (ID)	11A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
RoHS Status	RoHS Compliant
Lead Free	Lead Free

RFD3055LESM Product Details

RFD3055LESM Description

The RFD3055LESM is an N-Channel enhancement-mode power MOSFET manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.