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PN4391_D27Z

PN4391_D27Z

PN4391_D27Z

ON Semiconductor

PN4391_D27Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

PN4391_D27Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N4391
Power - Max 625mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0) 50mA @ 20V
Voltage - Cutoff (VGS off) @ Id 4V @ 1nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 30Ohms
In-Stock:3260 items

PN4391_D27Z Product Details

PN4391_D27Z Description


N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).

PN4391_D27Z Applications

low level analog switching,

sample and hold circuits

chopper stabalized amplifiers

Sourced from process 51.See J111 for characteristics

PN4391_D27Z Features


· Dual-Outputs by Single-Inductor architecture

· VOUT1 default output voltage (+5.0V/+5.5V)

· VOUT2 default output voltage (–5.0V/ –5.5V)

· Adjustable both output voltages by I2

C (I2

C disable at standby)

· Operating voltage range 2.5V to 5.5V

· High speed inverted charge pump technology

· Short Circuit Protection

· Standby current dissipation 0.3m


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