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PN4393_D26Z

PN4393_D26Z

PN4393_D26Z

ON Semiconductor

PN4393_D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

PN4393_D26Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2011
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N4393
Power - Max 625mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 20V
Voltage - Cutoff (VGS off) @ Id 500mV @ 1nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 100Ohms
In-Stock:3364 items

PN4393_D26Z Product Details

PN4393_D26Z Description


This device is designed for low level analog switch- ing, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51See J111 for characteristics. A N-Channel JFET is a JFET whose channel is composed of primarily electrons as the charge carrier. This means that when the transistor is turned on, it is primarily the movement of electrons which constitutes the current flow.

PN4393_D26Z FEATURES

Selectable 2- or 3-phase operation at up to 1 MHz per phase

±11 mV worst-case differential sensing error over

temperature

Logic-level PWM outputs for interface to external high

power drivers

Enhanced PWM flex mode for excellent load transient



PN4393_D26Z Applications


2-.3-or 4-Series cell li-ion battery-powered

products(NVDC or Non-NVDC

Wall-powered designs,particularly from 12-V supply


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