2SB1708TL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.As it features a collector emitter saturation voltage of -180mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at -3A is essential for high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 200MHz.An input voltage of 30V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 3A volts.
2SB1708TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 200MHz
2SB1708TL Applications
There are a lot of ROHM Semiconductor 2SB1708TL applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
