NXH100B120H3Q0STG Description
NXH100B120H3Q0STG is a type of power module containing a dual boost stage. The integrated field stop trench IGBTs and low reverse recovery and fast switching SiC diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Based on its sepcific characteristics, the NXH100B120H3Q0STG IGBT power module is well suited for solar inverter, uninterruptible power supplies, and energy storage systems.
NXH100B120H3Q0STG Features
Low reverse recovery and fast switching SiC diodes
Lower conduction losses and switching losses
1200 V ultra field stop IGBTs
Low inductive layout
NXH100B120H3Q0STG Applications
Solar inverter
Uninterruptible power supplies
Energy storage systems
