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FS100R12N2T4PBPSA1

FS100R12N2T4PBPSA1

FS100R12N2T4PBPSA1

Infineon Technologies

FS100R12N2T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS100R12N2T4PBPSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS StatusROHS3 Compliant
In-Stock:84 items

Pricing & Ordering

QuantityUnit PriceExt. Price
10$138.54100$1385.41

FS100R12N2T4PBPSA1 Product Details

FS100R12N2T4PBPSA1 Description


FS100R12N2T4PBPSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS100R12N2T4PBPSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 65A. The FS100R12N2T4PBPSA1 has 18 pins and it is available in Module packaging way. FS100R12N2T4PBPSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FS100R12N2T4PBPSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Turn Off Time-Nom (toff): 520 ns

  • Configuration: Three Phase Inverter



FS100R12N2T4PBPSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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