Name: NVD5117PLT4G
Brand: ON Semiconductor
SKU: NVD5117PLT4G
Availability: InStock

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NVD5117PLT4G

Manufacturer part number:NVD5117PLT4G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 16m Ω @ 29A, 10V ±20V 4.8nF @ 25V 85nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:NVD5117PLT4G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LIFETIME (Last Updated: 6 days ago)
Factory Lead Time	19 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	4.1W Ta 118W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.1W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	16m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4.8nF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta 61A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Rise Time	195ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	132 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.022Ohm
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	240 mJ
Number of Segments	80
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NVD5117PLT4G Product Details

NVD5117PLT4G Description

NVD5117PLT4G P-channel MOSFET is based on an original, unique vertical structure. NVD5117PLT4G MOSFET results in a dramatic reduction in the on-resistance. NVD5117PLT4G ON Semiconductor is utilized in Automotive High Side Drive, Engine Control, Body Control, as well as Automotive Infotainment.