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NTB125N02RT4G

NTB125N02RT4G

NTB125N02RT4G

ON Semiconductor

MOSFET N-CH 24V 15.9A D2PAK

SOT-23

NTB125N02RT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating125A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.98W Ta 113.6W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.72W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Current - Continuous Drain (Id) @ 25°C 95A Ta 120.5A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Rise Time39ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 125A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 95A
Drain-source On Resistance-Max 0.0062Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 120 mJ
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1527 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.804960$7.80496
10$7.363170$73.6317
100$6.946387$694.6387
500$6.553195$3276.5975
1000$6.182259$6182.259

About NTB125N02RT4G

The NTB125N02RT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 24V 15.9A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTB125N02RT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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