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NTY100N10

NTY100N10

NTY100N10

ON Semiconductor

NTY100N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTY100N10 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating123A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 313W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation313W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10110pF @ 25V
Current - Continuous Drain (Id) @ 25°C 123A Tc
Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V
Rise Time150ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 250 ns
Turn-Off Delay Time 340 ns
Continuous Drain Current (ID) 123A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 500 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2131 items

NTY100N10 Product Details

NTY100N10 Description


NTY100N10 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 100V. The operating temperature of NTY100N10 is -55??C~150??C TJ and its maximum power dissipation is 313W Tc. NTY100N10 has 3 pins and it is available in Tube packaging way.



NTY100N10 Features


  • Source?to?Drain Diode Recovery Time Comparable to a Discrete

  • Fast Recovery Diode

  • Avalanche Energy Specified

  • IDSS and RDS(on) Specified at Elevated Temperature

  • Pb?Free Package is Available*



NTY100N10 Applications


  • PWM Motor Control

  • Power Supplies

  • Converters


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