PHU66NQ03LT,127 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 860pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 66A.Pulsed drain current is maximum rated peak drain current 228A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
PHU66NQ03LT,127 Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 228A.
a 25V drain to source voltage (Vdss)
PHU66NQ03LT,127 Applications
There are a lot of NXP USA Inc.
PHU66NQ03LT,127 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
