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NTUD3169CZT5G

NTUD3169CZT5G

NTUD3169CZT5G

ON Semiconductor

NTUD3169CZT5G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTUD3169CZT5G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SOT-963
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation710mW
Terminal FormFLAT
Base Part Number NTUD3169CZ
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation200mW
Turn On Delay Time26 ns
Power - Max 125mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C 220mA 200mA
Rise Time46ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 145 ns
Turn-Off Delay Time 196 ns
Continuous Drain Current (ID) 280mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 400μm
Length 1.05mm
Width 850μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14912 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.170787$0.170787
10$0.161120$1.6112
100$0.152000$15.2
500$0.143396$71.698
1000$0.135279$135.279

NTUD3169CZT5G Product Details

NTUD3169CZT5G Description


A small signal is an AC signal superimposed on a bias signal (or on a DC constant signal) (more professionally, a signal with a zero average value). Decomposing the signal into two components allows the use of superposition techniques to simplify further analysis.


NTUD3169CZT5G Features

? Complementary MOSFET Device

? Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm

Package

? 1.5 V Gate Voltage Rating

? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

? This is a Pb?Free Device


NTUD3169CZT5G Applications

? Load Switch with Level Shift

? Optimized for Power Management in Ultra Portable Equipment






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