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SSM6N7002CFU,LF

SSM6N7002CFU,LF

SSM6N7002CFU,LF

Toshiba Semiconductor and Storage

SSM6N7002CFU,LF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

SSM6N7002CFU,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation285mW
Power - Max 285mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3.9 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 17pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 170mA
FET Feature Standard
RoHS StatusRoHS Compliant
In-Stock:29640 items

Pricing & Ordering

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SSM6N7002CFU,LF Product Details

SSM6N7002CFU,LF Description

The small-signal model of the MOS transistor is useful as an amplifier. It is easy to analyze the circuits using small-signal models. In summary, so far, we have read that using the MOS Transistor as an amplifier should be operated in the saturation region.


SSM6N7002CFU,LF Applications

• High-Speed Switching


SSM6N7002CFU,LF Features

(1) Gate-Source diode for protection

(2) Low drain-source on-resistance

: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA)

RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA)

RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)


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