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FDP39N20

FDP39N20

FDP39N20

ON Semiconductor

N-Channel Tube 66m Ω @ 19.5A, 10V ±30V 2130pF @ 25V 49nC @ 10V TO-220-3

SOT-23

FDP39N20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series UniFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureFAST SWITCHING
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 251W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation251W
Turn On Delay Time30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 66m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 25V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time160ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 150 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 39A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.066Ohm
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 860 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4503 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.21000$2.21
10$1.99300$19.93
100$1.60160$160.16
500$1.24566$622.83

FDP39N20 Product Details

FDP39N20 Description


A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. The FDP39N20 MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts are appropriate for the FDP39N20.



FDP39N20 Features

  • Low Crss (Typ. 57 pF)

  • 100% Avalanche Tested

  • Low Gate Charge (Typ. 38 nC)

  • RDS(on) = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A



FDP39N20 Applications


  • PDP TV

  • Lighting

  • AC-DC Power Supplies

  • Uninterruptible Power Supplies


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