Name: NTR4171PT1G
Brand: ON Semiconductor
SKU: NTR4171PT1G
Price: 0.50000 USD
Availability: InStock

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NTR4171PT1G

Manufacturer part number:NTR4171PT1G

Manufacturer:ON Semiconductor

Description:NTR4171PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTR4171PT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 18 hours ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	75MOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Power Dissipation-Max	480mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	720pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Gate Charge (Qg) (Max) @ Vgs	15.6nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	-2.2A
Threshold Voltage	-1.15V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Nominal Vgs	-1.15 V
Height	1.01mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTR4171PT1G Product Details

NTR4171PT1G Description

NTR4171PT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor for low RDS (on) at low gate voltage and low threshold voltage. Moreover, it provides high power and current handling capability. Based on its specific characteristics, it is well suited for load switch, as well as battery and load management applications.