Name: IRF9530NSTRLPBF
Brand: Infineon Technologies
SKU: IRF9530NSTRLPBF
Price: 1.53000 USD
Availability: InStock

new-10%

IRF9530NSTRLPBF

Manufacturer part number:IRF9530NSTRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 200m Ω @ 8.4A, 10V ±20V 760pF @ 25V 58nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:IRF9530NSTRLPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	HEXFET®
Published	1998
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	200mOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-14A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.8W Ta 79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	58ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-14A
Threshold Voltage	-4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	56A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	250 mJ
Recovery Time	190 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	5.084mm
Length	10.668mm
Width	9.65mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRF9530NSTRLPBF Product Details

IRF9530NSTRLPBF Description

IRF9530NSTRLPBF belongs to the family of HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and ruggedized device design. Therefore, it is well suited for high-frequency synchronous buck converters for computer processor power and high-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.

IRF9530NSTRLPBF Features

Low RDS (on)
Low on-state resistance per silicon area
Advanced switching performance
Ruggedized device design
Available in the D2Pak package

IRF9530NSTRLPBF Applications

High-frequency synchronous buck converters for computer processor power
High-frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use