NTP18N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTP18N06L Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
15A
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
48.4W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
48.4W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
121ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±10V
Fall Time (Typ)
42 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
15A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
10V
Drain-source On Resistance-Max
0.1Ohm
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
45A
Avalanche Energy Rating (Eas)
61 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:3201 items
NTP18N06L Product Details
IRL3803SPBF Description
IRL3803SPBF is a 30v HEXFET? Power MOSFET. The IRL3803SPBF HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit， combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRL3803SPBF Features
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3803S)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRL3803SPBF Applications
DC motor drive
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
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