Name: PMN28UN,165
Brand: NXP USA Inc.
SKU: PMN28UN,165
Availability: InStock

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PMN28UN,165

Manufacturer part number:PMN28UN,165

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 34m Ω @ 2A, 4.5V ±8V 740pF @ 10V 10.1nC @ 4.5V 12V SC-74, SOT-457

Case Package:SOT-23

Datasheet:PMN28UN,165 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchMOS™
Published	1997
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.75W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5.7A Tc
Gate Charge (Qg) (Max) @ Vgs	10.1nC @ 4.5V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	5.7A
Drain-source On Resistance-Max	0.04Ohm
DS Breakdown Voltage-Min	12V
RoHS Status	ROHS3 Compliant

PMN28UN,165 Product Details

PMN28UN,165 Overview

A device's maximal input capacitance is 740pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 5.7A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 12V.This transistor requires a 12V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).