NTMFS6H800NLT1G Description
P-MOSFETNTMFS6H800NLT1G uses gate voltage to control drain current, which is characterized by simple driving circuit, low driving power, fast switching speed and high working frequency, but its current capacity is small, withstand low voltage and is only used for low powerelectronic devices, and its working principle is the same as that of ordinary MOSFET.
NTMFS6H800NLT1G Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? These Devices are Pb?Free and are RoHS Compliant
NTMFS6H800NLT1G Applications
low power electronic devices
