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IXFT80N65X2HV

IXFT80N65X2HV

IXFT80N65X2HV

IXYS

MOSFET N-CH

SOT-23

IXFT80N65X2HV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 890W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 8300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:460 items

Pricing & Ordering

QuantityUnit PriceExt. Price
30$10.04500$301.35

About IXFT80N65X2HV

The IXFT80N65X2HV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFT80N65X2HV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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