NTMFS10N3D2C Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
NTMFS10N3D2C Features
Shielded Gate MOSFET Technology
Max rDS(on) = 3.2 m at VGS = 10 V, ID = 67 A
Max rDS(on) = 9 m at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
These Devices are Pb?Free and are RoHS Compliant
NTMFS10N3D2C Applications
Primary DC?DC MOSFET
Synchronous Rectifier in DC?DC and AC?DC
Motor Drive
Solar
