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DMTH10H4M5LPS-13

DMTH10H4M5LPS-13

DMTH10H4M5LPS-13

Diodes Incorporated

MOSFET BVDSS: 61V-100V POWERDI50

SOT-23

DMTH10H4M5LPS-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 2.7W Ta 136W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4843pF @ 50V
Current - Continuous Drain (Id) @ 25°C 20A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:7435 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.05000$1.05
500$1.0395$519.75
1000$1.029$1029
1500$1.0185$1527.75
2000$1.008$2016
2500$0.9975$2493.75

About DMTH10H4M5LPS-13

The DMTH10H4M5LPS-13 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET BVDSS: 61V-100V POWERDI50.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMTH10H4M5LPS-13, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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