NTMFD4901NFT1G Description
The half-dual N-channel power MOSFET is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTMFD4901NFT1G Features
Co-packaged power stage solution to minimize board space
Low side MOSFET with integrated Schottky
Minimized parasitic inductances
Small footprint (5mm x 6mm) for compact design
Low RDS(on) to minimize conduction losses
NTMFD4901NFT1G Applications
DC-DC converters
System voltage rails
Point-of-load
