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CSD88539ND

  • CSD88539ND - CSD88539ND datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website
  • CSD88539ND - CSD88539ND datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

CSD88539ND

CSD88539ND

Texas Instruments

CSD88539ND datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

SOT-23

CSD88539ND Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact PlatingGold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 540.001716mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Max Power Dissipation2.1W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number CSD88539
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2.1W
Turn On Delay Time6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 741pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Rise Time9ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 5 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.3A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 46A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Height 1.75mm
Length 4.9mm
Width 3.91mm
Thickness 1.58mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7964 items

Pricing & Ordering

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CSD88539ND Product Details

CSD88539ND Description

This dual small form factor (SO)-860V SO 23m Ω NexFETM power MOSFET is designed to operate as a half-bridge in low-current motor control applications.

CSD88539ND Features


Ultra-low Q and Qgd avalanche rating lead-free

Non-halogen in accordance with RoHS environmental protection standard


CSD88539ND application

Half-bridge synchronous step-down converter for motor control





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